[7a-PB1-1~8] 9.3 Nanoelectronics

[7a-PB1-7] Explanation of pump operation in common-gate triple-dot single-electron devices

〇Reon Takanoya¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

Keywords:Nano-devices

The condition for pump operation in common-gate triple-dot single-electron devices with three asymmetric gate capacitances is explained. In the previous presentation, it was reported that pump operation can occur in case that increments of electron numbers in the source, center, and drain sides of the three dots by decreasing the gate voltage are -1,+1,-1 respectively, and if the increments are 0,-1,0, pump operation can not occur. But this presentation, it is clarified that pump operation can occur if the first electron tunneling occur between the electrode and dot in both cases.