[8a-A414-1~8] 13.9 Optical properties and light-emitting devices

[8a-A414-6] Photoluminescence of ZnGa₂O₄:Eu films epitaxially grown on sapphire substrates

〇Housei Akazawa¹, Hiroyuki Shinojima² (1.NTT DIC, 2.Kurume NCT)

Keywords:ZnGa2O4, photoluminescence, Eu3+ ion

We have investigated photoluminescence of ZnGa₂O₄:Eu films deposited on sapphire c-plane substrates. Films deposited with H₂O gas were randomly oriented while those deposited with O₂ were epitaxial. The emission intensity of Eu³⁺ ions was not increased for the epitaxial case, indicating emissive Eu³⁺ ions exist at the surfaces or grain boundaries of crystallites. Asymmeteic parameters characterizing the purity of emission was introduced, which revealed epitaxial host film had preferential emission from ⁷F₂ state.