[8p-A413-1~7] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [8p-A413-2] Valence-Band Electronic Structure of n-type Ferromagnetic Semiconductor (In,Fe)As

〇MASAKI KOBAYASHI^1,2,3, LE DUC ANH³, PHAM NAM HAI^1,4, YOSHIHISA HARADA⁵, THORSTEN SCHMITT², ATSUSHI FUJIMORI⁶, MASAAKI TANAKA^1,3, MASAHARU OSHIMA³, VLADIMIR N. STROCOV² (1.CSRN, Univ. of Tokyo, 2.Swiss Light Source, 3.Gad. Sch. Eng., Univ. of Tokyo, 4.Tokyo Tech., 5.ISSP, 6.Dep. Phys., Univ. of Tokyo)

Keywords:Ferromagnetic semiconductor, Electronic structure, Angle-resolved photoemission spectroscopy

n-type Ferromagnetic semiconductor (In,Fe)As:Be shows ferromagnetic property depending on carrier concentration. In this study, we have conducted soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) on (In,Fe)As:Be thin films to unveil the origin of carrier-induced ferromagnetism. The three-dimesional band structure has been observed using SX-ARPES. Additionally, resonant ARPES reveals the Fe 3d-derived impurity band in the valence band.