[2L06-09] 構造材料2（先進材料）

[2L09] Thermal stability of tungsten and SiC with or without diffusion barrier (ZrN and TiN) at 1700 °C

*Yina DU¹, Tatsuya Hinoki¹, Kanjiro Kawasaki¹, Junyeab Lee¹, Fujio Shinoda¹ (1. Graduate School of Energy Science, Kyoto University)

キーワード：diffusion barrier, tungsten, SiC

To select an effective diffusion barrier for W and SiC system to fabricate SiC fiber reinforced W composites without reactions, nitrides (ZrN and TiN) were chosen as diffusion barrier, then evaluations were carried out. Dipping coating method was used to coat the diffusion barrier owing to its low-cost and easy to coat on the inner side fiber’s surface. Sputtering method was still used for comparison. A sandwich stack was joined coated CVD-SiC and W foils at the same sintering condition as SiCf/W composite (1700 °C for 1h with 20 MPa). The results show nitrides coated by sputtering method can prevent the diffusion of Si and C successfully. But unfortunately the depth of reaction zone is almost the same as the specimens without interface can be found. And dipped nitrides cannot find the unreacted area. Details about elements distribution and microstructure will be reported.