Poster 1

[PS1-08] Molecular Dynamics Simulation of Dislocations in Silicon Carbide (SiC) Crystal by Newly Developed Machine-Learning Potential

*Ken-ichi Saitoh¹, Kenji Nishimura², Junya Moriguchi³, Kazuhiro Tada³ (1. Department of Mechanical Engineering, Kansai University (Japan), 2. National Institute of Advanced Industrial Science and Technology(AIST) (Japan), 3. Graduate School of Science and Engineering, Kansai University (Japan))

キーワード：Molecular dynamics, Machine Learning, Silicon carbide (SiC), Dislocation, Interatomic potential