4:45 PM - 5:00 PM
[CTuP11F-03] Theory of highly-strained InAs quantum well lasers grown on InP for optical communications at 2 μm
[Presentation Style] Online
We present a theoretical analysis of highly-strained InAs quantum well lasers grown on InP for use in next-generation hollow-core fibre optical communications close to 2 μm, and validate our calculations against recent experimental data.