Mukanova Aliya1、Nurpeissova Arailym1、Kim Sung-Soo2、Myronov Maksym3、*Bakenov Zhumabay1
(1. School of Engineering, National Laboratory Astana, Nazarbayev University, 53 Kabanbay Batyr ave., Astana 010000, Kazakhstan、2. Graduate School of Energy Science and Technology, Chungnam National University, 99 Daehak Ave., Yuseong-gu, Daejeon, 34134, South Korea 、3. Physics Department, University of Warwick, Coventry CV4 7AL, United Kingdom)
キーワード:n-type doped silicon, thin film, porous current collector