Th-1: SiC-1

[Th1-2] Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers

*Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp.)