Th-2: SiC-2

[Th2-1/Inv] Homoepitaxial growth and defect characterization of 4H-SiC

*Birgit Kallinger¹, Christian Kranert¹, Zara Mercedes Schade¹, Mathias Rommel¹, Patrick Berwian¹ (1. Fraunhofer IISB)