Th-2: SiC-2

[Th2-5] Structural analysis of stacking fault complex/carrot defects with two grooves on the surface of a 4H-SiC epitaxial layer

*Hideki Sako¹, Shohei Hayashi¹, Kenji Kobayashi², Kentaro Ohira², Toshiyuki Isshiki³ (1. Toray Research Center Inc., 2. Hitachi High-Tech Corp., 3. Kyoto Institute of Technology)