13:00 〜 14:30

[TH-PS-43] Double negative differential resistance features in series AlN/GaN double-barrier resonant tunneling diodes vertically integrated by plasma-assisted molecular beam epitaxy

〇Jiajia Yao Yao¹ (1. Xidian Univ. (China))

13:00 〜 14:30

[TH-PS-44] Growth Window of Crystalline Zn_3-xP_2+x Grown by Van der Waals Epitaxy on Different Graphene Substrates

〇Thomas Hagger¹, Raphael Lemerle¹, Stefano Marinoni¹, Helena Freitas², Nico Kawashima³, Didem Dede¹, Chiara Mastopasqua⁴, Adrein Michon⁴, Anna Fontcuberta i Morral¹ (1. EPFL (Switzerland), 2. ICN2 (Spain), 3. Ruhr-Univ. Bochum (Germany), 4. Univ. Côte d'Azur/CNRS (France))

13:00 〜 14:30

[TH-PS-45] The Growth of GaN on WS₂ by Plasma-Assisted Molecular Beam Epitaxy

〇Ray-Yu Hong¹, Po-Yen Chen¹, Ing-Song Yu¹ (1. National Dong-Hwa University (Taiwan))

13:00 〜 14:30

[TH-PS-46] High-quality Mg₃Sb₂ Epitaxial Thin Films with Few Defects Grown Directly on c-plane Al₂O₃ Substrates

〇Akito Ayukawa¹, Nozomu Kiridoshi¹, Wakaba Yamamoto², Haruhiko Udono¹, Shunya Sakane¹ (1. Univ. of Ibaraki (Japan), 2. JEOL Ltd. (Japan))

13:00 〜 14:30

[TH-PS-47] Anti-phase boundaries free GaAs epilayer on on-axis Si (001) substrate grown by MBE

〇Jihong Ye¹, Hao Liu¹, Chen Jinag¹, Hao Zhai¹, Shiwei Cai¹, Jun Wang¹, Qi Wang¹, Yongqing Huang¹, Xiaoming Ren¹ (1. Beijing University of post and telecomunication (China))

13:00 〜 14:30

[TH-PS-48] Direct Growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si Platforms for Integrated Mid Infra-Red Photonics

〇Milan SILVESTRE^1,2, Jean-Baptiste Rodriguez¹, Stefano Calcaterra³, Giovanni Isella³, Eric Tournié^1,4 (1. Univ. of Montpellier (France), 2. RIBER SA (France), 3. Politecnico di Milano (Italy), 4. Institut Universitaire de France (France))

13:00 〜 14:30

[TH-PS-49] Epitaxial Growth of Zintl Phase Mg₃Sb₂ Thin Films on Si (001) Substrate by Simultaneous Deposition

〇Nozomu Kiridoshi¹, Akito Ayukawa¹, Haruhiko Udono¹, Shunya Sakane¹ (1. Ibaraki University (Japan))

13:00 〜 14:30

[TH-PS-50] InP-based materials on Si for energy production and photonic applications

Bienvenu Boulingui-Koumba¹, Fatima Merhi², Antoine Letoublon¹, Paul Huillery¹, Bruno Fabre², Rozenn Gautheron-Bernard¹, Tony Rohel¹, Gabriel Loget³, Yoan Leger², Nicolas Bertru¹, Charles Cornet¹, 〇Fauzia Jabeen¹ (1. Univ Rennes, INSA Rennes, CNRS, Institut FOTON – UMR 6082, F-35000 Rennes (France), 2. Univ Rennes, ISCR Rennes, CNRS (UMR 6082), F-35000, Rennes (France), 3. Univ of Bordeaux, ISM Bordeaux, CNRS (UMR 5255), F-33600, PESSAC (France))

13:00 〜 14:30

[TH-PS-51] Atomic Scale Description of III-V/Si (001) Heteroepitaxial Crystals

Sreejith Pallikkara Chandrasekharan¹, 〇Fauzia Jabeen¹, Charles Cornet¹, Laurent Pedesseau¹ (1. Univ Rennes, INSA Rennes, CNRS, Institut FOTON (France))

13:00 〜 14:30

[TH-PS-52] Massive Onset Potential Shifting with an Epitaxial GaAs/Si Photocathode for Solar H2 Production

Sd Hanh Vi Li¹, Mekan Piriyev¹, Sylvain Febrve^1,3, Gabriel Loget², Sylvie Harel⁴, Angus Rockett⁵, Kenneth Steirer⁵, Tony Rohel¹, Karine Tavernier¹, Julie Le Pouliquen², Ludovic Largeau⁶, Gilles Patriarche⁶, Rozenn Bernard¹, 〇Fauzia Jabeen¹, Yoan Léger¹, Nicolas Bertrue¹, Charles Cornet (1. Univ Rennes, INSA Rennes, CNRS, Institut FOTON – UMR 6082, F-35000 Rennes (France), 2. Univ Rennes, ISCR Rennes, CNRS (UMR 6082), F-35000, Rennes (France), 3. 3SP Technologies SAS, F-91625, Nozay (France), 4. IMN CNRS UMR6502, F-44322, Nantes (France), 5. Dep. of Metall. and Mat. Eng., Colorado School of Mines, CO 80401, United States (United States of America), 6. C2N UMR 9001, CNRS, Uni. Of Paris Sud, Uni. of Paris Saclay, F-91120, Palaiseau (France))

セッション情報

Heterogeneous Epitaxy and Integration

[TH-PS-43] Double negative differential resistance features in series AlN/GaN double-barrier resonant tunneling diodes vertically integrated by plasma-assisted molecular beam epitaxy

[TH-PS-44] Growth Window of Crystalline Zn_3-xP_2+x Grown by Van der Waals Epitaxy on Different Graphene Substrates

[TH-PS-45] The Growth of GaN on WS₂ by Plasma-Assisted Molecular Beam Epitaxy

[TH-PS-46] High-quality Mg₃Sb₂ Epitaxial Thin Films with Few Defects Grown Directly on c-plane Al₂O₃ Substrates

[TH-PS-47] Anti-phase boundaries free GaAs epilayer on on-axis Si (001) substrate grown by MBE

[TH-PS-48] Direct Growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si Platforms for Integrated Mid Infra-Red Photonics

[TH-PS-49] Epitaxial Growth of Zintl Phase Mg₃Sb₂ Thin Films on Si (001) Substrate by Simultaneous Deposition

[TH-PS-50] InP-based materials on Si for energy production and photonic applications

[TH-PS-51] Atomic Scale Description of III-V/Si (001) Heteroepitaxial Crystals

[TH-PS-52] Massive Onset Potential Shifting with an Epitaxial GaAs/Si Photocathode for Solar H2 Production

認証