Characterization of Sc<sub>0.18</sub>Al<sub>0.82</sub>N/GaN Heterostructures Grown by Molecular Beam Epitaxy

Shizhao Fan

1:00 PM - 2:30 PM

[TU-PS-30] Characterization of Sc_0.18Al_0.82N/GaN Heterostructures Grown by Molecular Beam Epitaxy

〇Shizhao Fan^1,2 (1. Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences (China), 2. Key laboratory of Semiconductor Display Materials and Chips, Chinese Academy of Sciences (CAS) (China))

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[TU-PS-30] Characterization of Sc_0.18Al_0.82N/GaN Heterostructures Grown by Molecular Beam Epitaxy

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Presentation information

Nitrides

[TU-PS-30] Characterization of Sc0.18Al0.82N/GaN Heterostructures Grown by Molecular Beam Epitaxy

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[TU-PS-30] Characterization of Sc_0.18Al_0.82N/GaN Heterostructures Grown by Molecular Beam Epitaxy