[Tu-2A] MOSFETs II

Tue. Oct 1, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

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10:45 AM - 11:15 AM

[Tu-2A-01(Invited)] Challenges in extremely low specific on-resistance with SiC SJ-VMOSFETs

*Takeyoshi Masuda¹, Y. Saito^1,2, T. Hatayama¹, H. Michikoshi¹, Y. Mikamura², S. Harada¹ (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Sumitomo Electric Industries, Ltd(Japan))

11:15 AM - 11:30 AM

[Tu-2A-02] Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs compared with Linear, Square, and Hexagonal Topologies

*Kijeong Han¹, Ajit Kanale¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹ (1. North Carolina State Univ.(United States of America))

11:30 AM - 11:45 AM

[Tu-2A-03] Field Stabilizing Trench-Etched DMOS for Suppression of Performance Variation

*Takeru Suto¹, Naoki Watanabe¹, Yuan Bu¹, Hiroshi Miki¹, Naoki Tega¹, Yuki Mori¹, Digh Hisamoto¹, Akio Shima¹ (1. Hitachi, Ltd.(Japan))

11:45 AM - 12:00 PM

[Tu-2A-04] Experimental Study of Switching and Short-Circuit Performance of 1.2kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

*Aditi Agarwal¹, Ajit Kanale¹, Kijeong Han¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹ (1. NC State University(United States of America))

12:00 PM - 12:15 PM

[Tu-2A-05] Superior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length.

*Taiga Kanamori¹, Ruito Aiba¹, Masataka Okawa¹, Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

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