[We-2B] 4H-homo-epitaxy

2019年10月2日(水) 10:45 〜 12:15 Annex Hall 2 (Kyoto International Conference Center)

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10:45 〜 11:15

[We-2B-01(Invited)] Isotopically enriched 4H-28Si12C growth for high power high frequency and quantum applications

*Jawad Ul Hassan¹, Robin Karhu¹, Björn Lundqvist¹, Misagh Ghezellou¹, Louise Lilja¹, Jr-Tai Chen^1,2, Sven G Andersson¹, Björn Magnusson³, Olle Kordina^1,2, Örjan Danielsson¹, Ivan G Ivanov¹, Einar Ö Sveinbjörnsson^1,4, Nguyen T Son¹, Peder Bergman¹, Erik Janzén¹ (1. Linköping University(Sweden), 2. SweGaN AB(Sweden), 3. Norstel AB(Sweden), 4. University of Iceland(Iceland))

11:15 〜 11:30

[We-2B-02] Revisiting the site-competition doping of 4H-SiC: cases of N and Al

*Gabriel Ferro¹, Didier Chaussende² (1. Lab. LMI, Lyon Univ.(France), 2. Lab. SIMAP, Grenoble Univ.(France))

11:30 〜 11:45

[We-2B-03] High Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhanced Buffer Layer for High Current Applications

*Hironori Itoh¹, Taro Enokizono¹, Takaya Miyase¹, Tsutomu Hori¹, Keiji Wada¹, Hideyuki Doi¹, Masaki Furumai¹ (1. Sumitomo Electric Industries, Ltd.(Japan))

11:45 〜 12:00

[We-2B-04] CVD parameters regulation for 4H-SiC trench fast-filling over 10 μm/h

*Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1. AIST(Japan))

12:00 〜 12:15

[We-2B-05] Low temperature homoepitaxy of 4H-SiC with extremely high levels of electrically active dopants on off- and on-axis substrates

*Maksym Myronov¹, Gerard Colston², Stephan Wirths³ (1. The University of Warwick(UK), 2. Advanced Epi Materials and Devices Ltd(UK), 3. ABB Switzerland Ltd(Switzerland))

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