[We-3B] Fundamental Physics and Measurement Techniques

2019年10月2日(水) 13:45 〜 15:45 Annex Hall 2 (Kyoto International Conference Center)

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13:45 〜 14:15

[We-3B-01(Invited)] Fundamentals of solid state physics explored with silicon carbide/graphene: electron tunneling and ultrafast Schottky rectification

*Heiko B. Weber¹ (1. Friedrich-Alexander-University Erlangen-Nuremberg(Germany))

14:15 〜 14:30

[We-3B-02] Influence of carbon-implantation on carrier density and carrier lifetimes using time, space, and spectral resolutions

*Keiki Fukumoto¹, Shin-ya Koshihara², Munetaka Noguchi³, Hiroshi Watanabe³, Mutsuko Hatano² (1. High Energy Accelerator Research Organization(Japan), 2. Tokyo Inst. Tech.(Japan), 3. Mitsubishi Electric Corp.(Japan))

14:30 〜 14:45

[We-3B-03] Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD

*Chansoon Koo¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

14:45 〜 15:00

[We-3B-04] An Isothermal Annealing Study of the EH1 and EH3 Levels in 4H-SiC

*Giovanni Alfieri¹, Andrei Mihaila¹ (1. ABB(Switzerland))

15:00 〜 15:15

[We-3B-05] Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC

*Kazutaka Kanegae¹, Takafumi Okuda¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan), 2. Nagoya Univ.(Japan))

15:15 〜 15:30

[We-3B-06] Lifetime limiting substrate originated deep level defects in 4H-SiC epilayers

*Juergen Erlekampf¹, Birgit Kallinger¹, Mathias Rommel¹, Patrick Berwian¹, Jochen Friedrich¹, Tobias Erlbacher¹ (1. Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen(Germany))

15:30 〜 15:45

[We-3B-07] Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction

*Takuya Maeda¹, Xilun Chi¹, Hajime Tanaka¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1. Kyoto University(Japan), 2. Nagoya University(Japan))

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