8:45 AM - 9:15 AM
*Hrishikesh Das1, S Sunkari1, J Justice1, H Pham2, G Park2 (1. ON Semiconductor, South Portland(United States of America), 2. ON Semiconductor, Bucheon(Korea))
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Schedule
Session information
Oral Presentation
Characterization and Defect Engineering
[Th-1B] Extended Defects II
Thu. Oct 3, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)
9:15 AM - 9:30 AM
*Robert T Leonard1, Matthew Conrad1, Edward Van Brunt1, Jeffrey Giles1, Alexander K Shveyd1, Elif Balkas1 (1. Wolfspeed(United States of America))
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Schedule
9:30 AM - 9:45 AM
*Naohiro Sugiyama1,2, Takeshi Mitani2, Isaho Kamata3, Tomohisa Kato2, Hidekazu Tsuchida3, Hajime Okumura2 (1. DENSO Corp.(Japan), 2. Advanced Indus. Sci. and Tech.(Japan), 3. Central Res. Inst. of Electric Power Industry(Japan))
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Schedule
9:45 AM - 10:00 AM
*Yusuke Sudoh1, Makoto Kitabatake1, Tadaaki Kaneko2 (1. Toyo Tanso Corp.(Japan), 2. Kwansei Gakuin Univ.(Japan))
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Schedule
10:00 AM - 10:15 AM
[Th-1B-05] 2D extended defects interaction: the case of grain boundary and stacking faults in 3C-SiC
*Massimo Zimbone1, Corrado Bongiorno1, Cristiano Calabretta2, Francesco La Via1 (1. CNR-Inst. for Microelectronics and Microsystems (Italy)(Italy), 2. MIFT, Univ. degli studi di Messina(Italy))
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Schedule