[Th-2B] Alternative Bulk Growth

2019年10月3日(木) 10:45 〜 12:15 Annex Hall 2 (Kyoto International Conference Center)

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10:45 〜 11:15

[Th-2B-01(Invited)] Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

*Yuichiro Tokuda¹, N. Hoshino², H. Kuno¹, H. Uehigashi¹, T. Okamoto¹, T. Kanda¹, N. Ohya¹, I. Kamata², H. Tsuchida² (1. DENSO CORPORATION(Japan), 2. Central Research Institute of Electric Power Industry (CRIEPI)(Japan))

11:15 〜 11:30

[Th-2B-02] Changes in dislocation densities in 4H-SiC bulk crystals obtained by gas source method at a high growth rate

*Norihiro Hoshino¹, Isaho Kamata¹, Takahiro Kanda³, Yuichiro Tokuda³, Naohiro Sugiyama^2,3, Hironari Kuno³, Hidekazu Tsuchida¹ (1. CRIEPI(Japan), 2. AIST(Japan), 3. DENSO CORP.(Japan))

11:30 〜 11:45

[Th-2B-03] Application of high-quality SiC solution growth to large size crystal

*Can Zhu¹, Tomoki Endo¹, Takama Unno¹, Haruhiko Koizumi¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1. Nagoya Univ.(Japan), 2. National Inst.of Advanced Indus. Sci. and Tech.(Japan))

11:45 〜 12:00

[Th-2B-04] Study of the equilibrium structure of the interface between vicinal 4H-SiC {0001} faces and liquid Si

Xinming Xing¹, Takeshi Yoshikawa², *Didier Chaussende¹ (1. Univ. Grenoble Alpes, CNRS, SIMAP(France), 2. The Univ. of Tokyo, Inst. of Industrial Sci.(Japan))

12:00 〜 12:15

[Th-2B-05] Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si

*TAKAMA UNNO¹, CAN ZHU², SHUNTA HARADA^1,2, HARUHIKO KOIZUMI^2,4, MIHO TAGAWA^1,2, TORU UJIHARA^1,2,3 (1. Department of Materials Process and Eng., Nagoya Univ.(Japan), 2. Center for Integrated Res. of Future Electronics (CIRFE), Inst. of Materials and System for Sustainability (IMaSS), Nagoya Univ.(Japan), 3. GaN Advanced Device Open Innovation Lab. (GaN-OIL), National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan), 4. Department of Electorical and Electronic Eng., Mie Univ.(Japan))

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