[Fr-1A] Oxide Stability and Reliability

2019年10月4日(金) 08:45 〜 10:00 Room A (Kyoto International Conference Center)

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08:45 〜 09:15

[Fr-1A-01(Invited)] Threshold voltage instabilities in 4H-SiC MOSFETs

*Gregor Pobegen¹, T Aichinger², G Rescher² (1. KAI Kompetenzzentrum für Automobil- und Industrieelektronik GmbH(Austria), 2. Infineon Technologies AG(Austria))

09:15 〜 09:30

[Fr-1A-02] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method

*Dai Okamoto¹, Hiroki Nemoto¹, Xufang Zhang¹, Xingyan Zhou¹, Mitsuru Sometani², Mitsuo Okamoto², Shinsuke Harada², Tetsuo Hatakeyama², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. Tsukuba(Japan), 2. AIST(Japan))

09:30 〜 09:45

[Fr-1A-03] Tunneling Effects in NH₃ annealed 4H-SiC Trench MOSFETs

*Judith Berens^1,2, Gregor Pobegen¹, Tibor Grasser² (1. KAI GmbH(Austria), 2. Inst. for Microelectronics, TU Wien(Austria))

09:45 〜 10:00

[Fr-1A-04] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias

*Hiroki Nemoto¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

セッション情報

[Fr-1A] Oxide Stability and Reliability

[Fr-1A-01(Invited)] Threshold voltage instabilities in 4H-SiC MOSFETs

[Fr-1A-02] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method

[Fr-1A-03] Tunneling Effects in NH₃ annealed 4H-SiC Trench MOSFETs

[Fr-1A-04] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias

認証

セッション情報

[Fr-1A] Oxide Stability and Reliability

[Fr-1A-01(Invited)] Threshold voltage instabilities in 4H-SiC MOSFETs

[Fr-1A-02] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method

[Fr-1A-03] Tunneling Effects in NH3 annealed 4H-SiC Trench MOSFETs

[Fr-1A-04] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias

認証

[Fr-1A-03] Tunneling Effects in NH₃ annealed 4H-SiC Trench MOSFETs