3:45 PM - 5:45 PM

[IP-01(Invited)] SiC epitaxial reactor cleaning by ClF₃ gas with the help of reaction heat

Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

3:45 PM - 5:45 PM

[IP-02(Invited)] Silicon vacancy related defects in 4H SiC for quantum technology

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

3:45 PM - 5:45 PM

[IP-03(Invited)] Evaluation of the influence of Al⁺ implantation on the forward degradation of SiC bipolar devices

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

3:45 PM - 5:45 PM

[IP-04(Invited)] Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

3:45 PM - 5:45 PM

[Mo-P-01] Nitrogen doping behavior on the (000−1) facet of 4H-SiC crystals

*Kaito Yokomoto¹, Masahiro Yabu¹, Noboru Ohtani¹ (1. Kwansei Gakuin University, School of Science and Technology(Japan))

3:45 PM - 5:45 PM

[Mo-P-02] Propagation behavior of threading screw dislocations in 4H-SiC crystals

*Naoto Shinagawa¹, Takuto Izawa¹, Noboru Ohtani¹ (1. Kwansei Gakuin University, School of Science and Technology(Japan))

3:45 PM - 5:45 PM

[Mo-P-03] Observation of The Equilibrium Interface between Vicinal 4H-SiC (0001) Faces and Liquid Si

*Xinming Xing¹, Yuchuang Yao², Takeshi Yoshikawa², Didier Chaussende¹ (1. Univ. Grenoble Alpes, CNRS, SIMAP(France), 2. The University of Tokyo(Japan))

3:45 PM - 5:45 PM

[Mo-P-04] New Methodologies to Evaluate the Step-bunching of 4H-SiC in Different Alloy Solvents

Yao Yuchuan¹, *Sakiko Kawanishi², Didier Chaussende³, Takumi Horiike¹, Takeshi Yoshikawa¹ (1. The Univ. Tokyo(Japan), 2. Tohoku Univ.(Japan), 3. Univ. Grenoble Alpes(France))

3:45 PM - 5:45 PM

[Mo-P-05] Flow modification in top seeded solution growth of SiC single crystal to enhance the growth rate

*Minh-Tan Ha^1,2, Yun-Ji Shin¹, Si-Young Bae¹, Myung-Hyun Lee¹, Cheol-Jin Kim², Seong-Min Jeong¹ (1. KICET(Korea), 2. Gyeongsang National Univ.(Korea))

3:45 PM - 5:45 PM

[Mo-P-06] Achievement of low carrier concentration of high-uniformity SiC films grown by high speed wafer rotation vertical CVD tool

*Yoshiaki Daigo¹, Akio Ishiguro¹, Shigeaki Ishii¹, Takehiko Kobayashi¹, Yoshikazu Moriyama¹ (1. NuFlare Technology, Inc.,(Japan))

3:45 PM - 5:45 PM

[Mo-P-07] Origin of large bumps abnormally grown on 4H-SiC epitaxial film by adding HCl gas with high Cl/Si ratio in CVD process

*Akio Ishiguro¹, Yoshiaki Daigo¹ (1. NuFlare Technology, Inc.,(Japan))

3:45 PM - 5:45 PM

[Mo-P-08] 150 mm 4H Silicon carbide wafer geometry optimization, defect reduction by thermal treatment and quality of epilayer

*Ching-Shan Lin¹, Manhsuan Lin¹, Chuck Hsu¹, Roman Drachev², Bob Berliner², Bala Bathey², SRaghavan Parthasarathy² (1. GlobalWafers Co.,Ltd(Taiwan), 2. GT Advanced Technologies,(United States of America))

3:45 PM - 5:45 PM

[Mo-P-09] High etching rate photo-electrochemical CARE (catalyst referred etching) of SiC by a potential control of catalyst surface

*Ryosuke Ohnishi¹, Daisetsu Toh¹, Hideka Kida¹, Satoshi Matsuyama¹, Yasuhisa Sano¹, Kazuto Yamauchi^1,2 (1. Department of Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan), 2. Res. Center of Ultra-Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan))

3:45 PM - 5:45 PM

[Mo-P-10] Quantum Information Applications with Single Defect Centers in 4H-SiC

*Naoya Morioka¹, Roland Nagy¹, Matthias Niethammer¹, Izel Gediz¹, Erik Hesselmeier¹, Matthias Widmann¹, Yu-Chen Chen¹, Roman Kolesov¹, Péter Udvarhelyi², Cristian Bonato³, Jawad Ul Hassan⁴, Robin Karhu⁴, Ivan Gueorguiev Ivanov⁴, Nguyen Tien Son⁴, Jeronimo R. Maze⁵, Takeshi Ohshima⁶, Öney O. Soykal⁷, Ádám Gali², Sang-Yun Lee⁸, Florian Kaiser¹, Jörg Wrachtrup¹ (1. Univ. of Stuttgart(Germany), 2. Hungarian Academy of Sci.(Hungary), 3. Heriot-Watt Univ.(UK), 4. Linköping Univ.(Sweden), 5. Pontifical Catholic University of Chile(Chile), 6. National Inst. for Quantum and Radiological Sci. and Tech.(Japan), 7. Naval Res. Lab.(United States of America), 8. Korea Inst. of Sci. and Tech.(Korea))

3:45 PM - 5:45 PM

[Mo-P-11] The effects of γ-ray irradiation on optical properties of single photon sources in 4H-SiC MOSFET

*YUTA ABE^1,2, Takahide Umeda¹, Mitsuo Okamoto³, Shinsuke Harada³, Yuichi Yamazaki², Takeshi Ohshima^1,2 (1. Univ. of Tsuskuba(Japan), 2. National Inst. for Quantum and Radiological Sci. and Tech.(Japan), 3. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

3:45 PM - 5:45 PM

[Mo-P-12] An Ultra-Compact Silicon Carbide Solid State Quantum Center Magnetometer for Space

*Hannes Kraus¹, David J. Spry², Philip G. Neudeck², Yuichi Yamazaki³, Shin-Ichiro Sato³, Takeshi Ohshima³, Corey J. Cochrane¹ (1. NASA Jet Propulsion Lab. / California Inst. of Tech., Pasadena, CA(United States of America), 2. NASA Glenn Res. Center, Cleveland, OH(United States of America), 3. National Inst. of Quantum and Radiological Sci. and Tech., Takasaki, Gunma(Japan))

3:45 PM - 5:45 PM

[Mo-P-13] Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles

*Shinichiro Sato¹, Takuma Narahara^1,2, Shinobu Onoda¹, Yuichi Yamazaki¹, Yasuto Hijikata², Brant C. Gibson³, Andrew D. Greentree³, Takeshi Ohshima¹ (1. QST(Japan), 2. Saitama Univ.(Japan), 3. RMIT Univ.(Australia))

3:45 PM - 5:45 PM

[Mo-P-14] Run-up Width for Photo-induced Expansion of Single Shockley Stacking Faults in 4H-SiC

*Koji Maeda¹, Koichi Murata¹, Takeshi Tawara^2,3, Isao Kamata¹, Hidekazu Tsuchida¹ (1. Central Res. Inst. of Electric Power Industry(CRIEPI)(Japan), 2. National Inst. of Advanced Sci. and Tech.(AIST)(Japan), 3. Fuj Electric Co. Ltd.(Japan))

3:45 PM - 5:45 PM

[Mo-P-15] More Insights in Silicon Carbide Material Quality with Advanced X-Ray Topography Imaging

*Roland Weingaertner¹, Birgit Kallinger¹, Thomas Wicht¹, Patrick Berwian¹, Christian Kranert¹, Christian Reimann¹, Elke Meissner¹, Jürgen Gräßlin², Uwe Preckwinkel², Jochen Friedrich¹ (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058 Erlangen(Germany), 2. Rigaku Europe SE, Hugenottenallee 167, 63263 Neu-Isenburg(Germany))

3:45 PM - 5:45 PM

[Mo-P-16] Nondestructive Inspection of Defects in SiC substrates and Epitaxial Layer by Phase Contrast Microscope

*Ryo Hattori¹, Osamu Oku², Kazutsugu Murakami¹, Masaaki Kuzuhara³ (1. Ceramic Forum Co.,Ltd(Japan), 2. Micro-world Servics(Japan), 3. Univ. of Fukui(Japan))

3:45 PM - 5:45 PM

[Mo-P-17] Automated defect recognition in 4H-SiC substrates, epiwafers, and partially processed wafers

*Birgit Kallinger¹, Katharina Roßhirt-Lilla¹, Patrick Berwian¹, Steffen Oppel², Simon Steurer², Heino Möller² (1. Fraunhofer IISB(Germany), 2. INTEGO GmbH(Germany))

3:45 PM - 5:45 PM

[Mo-P-18] Crystal defects and contact angle in SiO_x-SiC core-shell nanowires

*Andrea Broggi¹, Eli Ringdalen², Merete Tangstad¹ (1. Norwegian Univ. of Science and Technology(Norway), 2. SINTEF Materials and Chemistry(Norway))

3:45 PM - 5:45 PM

[Mo-P-19] Improved high precision dopant / carrier concentration profiling with corona-charge non-contact C-V (CnCV)

*Alexandre Savtchouk¹, Marshall Wilson¹, John D'Amico¹, Carlos Almeida¹, Jacek Lagowski¹ (1. Semilab SDI(United States of America))

3:45 PM - 5:45 PM

[Mo-P-20] Resistivity measurement of P⁺-implanted 4H-SiC samples prepared at different implantation and annealing temperatures using terahertz time-domain spectroscopic ellipsometry

*Kotaro Ishiji¹, Seiji Kawado¹, Yasuharu Hirai¹, Shinji Nagamachi² (1. Kyushu synchrotron light research center(Japan), 2. Nagamachi Sci. Lab. co. ltd.(Japan))

3:45 PM - 5:45 PM

[Mo-P-21] Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-doped SiC using a Novel Image Analysis Technique

*Jung Gon Kim¹, Woo Sik Yoo¹, Dae Sung Kim², Won Jae Lee² (1. WaferMasters, Inc.(United States of America), 2. Dong-Eui Univ.(Korea))

3:45 PM - 5:45 PM

[Mo-P-22] Depth Analysis of Al-implanted 4H-SiC by Confocal Raman Microscopy

*Ying Song¹, Zong Wei Xu¹, Tao Liu¹, Mathias Rommel², Hong Wang³, Feng Zhou Fang¹ (1. State Key Lab. of Precision Measuring Tech. & Instruments, Centre of Micro/Nano Manufacturing Tech. Tianjin Univ. (China), 2. Fraunhofer Inst. for Integrated Systems and Device Tech.(Germany), 3. State Key Lab. of Separation Membranes and Membrane Processes, School of Materials Sci. and Engineering, Tianjin Polytechnic Univ.(China))

3:45 PM - 5:45 PM

[Mo-P-23] Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Induced Current (OBIC)

Camille Sonneville^1,2,3, *Dominique Planson^1,2,3, Luong-Viet Phung^1,2,3, Pascal Bevilacqua^1,2,3, Besar Asllani^1,2,3 (1. Univ Lyon(France), 2. INSA Lyon(France), 3. Ampere Lab(France))

3:45 PM - 5:45 PM

[Mo-P-24] Electrically detected magnetic resonance study of intrinsic defects in SiC pn junction devices

*Brett Cameron Johnson¹, C TK Lew¹, Ryan A Parker¹, Daniel L Creedon¹, Jeffrey C McCallum¹ (1. Univ. of Melbourne(Australia))

3:45 PM - 5:45 PM

[Mo-P-25] DFT investigations into the interactions of NH and NO in a-SiO₂

*Manesh Vinay Mistry¹, Jon Cottom¹, Kamal Patel¹, Alex Shluger¹ (1. UCL(UK))

3:45 PM - 5:45 PM

[Mo-P-26] The P_bC (carbon dangling bond) center at 4H-SiC(0001)/SiO₂ interface: A first-principles study

*Takuma Kobayashi¹, Takahide Umeda², Yu-ichiro Matsushita¹ (1. Tokyo Inst. of Tech.(Japan), 2. Univ. of Tsukuba(Japan))

3:45 PM - 5:45 PM

[Mo-P-27] Investigating Inversion Layer Mobility of Holes in 4H-SiC

Nick Gilles Schneider¹, *Johanna Mueting¹, Roberta Nipoti², Ute Drechsler³, Ulrike Grossner¹ (1. Advanced Power Semiconductor Laboratory, ETH Zurich Univ.(Switzerland), 2. IMM-CNR, unit of Bologna Res.(Italy), 3. IBM Zurich Res.(Switzerland))

3:45 PM - 5:45 PM

[Mo-P-28] Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si

*Fan Li¹, Song Qiu¹, Mike Jennings², Phil Mawby¹ (1. Univ. of Warwick (UK), 2. Swansea Univ.(UK))

3:45 PM - 5:45 PM

[Mo-P-29] Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET based on Temperature-dependent Hall Effect Measurement

Hironori TAKEDA¹, Mitsuru SOMETANI², Takuji HOSOI¹, Takayoshi SHIMURA¹, Hiroshi YANO³, *Heiji WATANABE¹ (1. Osaka Univ.(Japan), 2. AIST(Japan), 3. Univ. Tsukuba(Japan))

3:45 PM - 5:45 PM

[Mo-P-30] Effect of Al ion implantation and activation annealing on work function values of 4H-SiC Epitaxial Layers

*Hong-Ki Kim¹, Seongjun kim¹, Min-Jae Kang¹, Jonas Buettner², Minwho Lim², Tobias Erlbacher², Anton J. Bauer², Sang-Mo Koo³, Nam-suk Lee¹, Hoon-Kyu Shin¹ (1. POSTECH(Korea), 2. Fraunhofer IISB(Germany), 3. Kwangwoon Univ.(Korea))

3:45 PM - 5:45 PM

[Mo-P-31] 3×10¹⁸ - 1×10¹⁹cm^-3 Al⁺ Ion Implanted 4H-SiC: Annealing Time Effect

Roberta Nipoti¹, *Antonella Parisini², Virginia Boldrini¹, Salvatore Vantaggio², Maria Concetta Canino¹, Filippo Bonafè¹, Giovanni Alfieri³ (1. CNR-IMM of Bologna(Italy), 2. Parma Univ., DMPCS - CNISM(Italy), 3. ABB(Switzerland))

Cancelled

3:45 PM - 5:45 PM

[Mo-P-32] Withdrawn

3:45 PM - 5:45 PM

[Mo-P-33] Suppression of Ion Channeling Effects in 4H-SiC Substrate by Tilt Angle Control of Ion Implantation

*Tomonori Okada¹, Jun Inoue¹, Fumitaka Nishiyama¹, Hiroshi Sezaki^1,2, Shin-Ichiro Kuroki¹ (1. RNBS, Hiroshima Univ.(Japan), 2. Phenitec Semiconductor Co .Ltd.(Japan))

3:45 PM - 5:45 PM

[Mo-P-34] Intentional and unintentional channeling during implantation of p-dopants in 4H-SiC

*Margareta K Linnarsson¹, Anders Hallen¹, Lasse Vines² (1. KTH Royal Institute of Technology(Sweden), 2. Univ. of Oslo(Norway))

3:45 PM - 5:45 PM

[Mo-P-35] Improvement of Channel Characteristics of 4H-SiC PMOSFET by Low Temperature Wet-POA with H₂-annealing

*Jun Koyanagi¹, Koji Kita¹ (1. The Univ. of Tokyo(Japan))

3:45 PM - 5:45 PM

[Mo-P-36] Investigating POCl₃ Annealing for SiC Power MOSFETs

*Yanrui Ju¹, Bouvet Bouvet², Roger Stark¹, Judith Wörle¹, Ulrike Grossner¹ (1. ETH Zurich(Switzerland), 2. École Polytechnique Fédérale de Lausanne(Switzerland))

3:45 PM - 5:45 PM

[Mo-P-37] Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400°C High-Temperature Aging Tests

*Cuong Van Vuong¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki ², Shin-Ichiro Kuroki ¹ (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Corp(Japan))

3:45 PM - 5:45 PM

[Mo-P-38] Dynamic Measurement Method to Extract High Voltage and High Current I-V Characteristics of SiC MOSFET with Reduced Self Heating

*Yohei Nakamura¹, Tatsuya Yanagi¹, Hiroyuki Sakairi¹, Naotaka Kuroda¹, Ken Nakahara¹ (1. ROHM Co., Ltd.(Japan))

3:45 PM - 5:45 PM

[Mo-P-39] Increased Short-Circuit Withstand Time and Reduced DIBL by Constant-Gate-Charge Scaling in SiC Power MOSFETs

*James A Cooper¹, Dallas T. Morisette², Madankumar Sampath² (1. Sonrisa Research, Inc. and Purdue Univ.(United States of America), 2. Purdue Univ.(United States of America))

3:45 PM - 5:45 PM

[Mo-P-40] The IMOSFET: A Deeply-Scaled, Fully-Self-Aligned Trench MOSFET

Madankumar Sampath³, *James A Cooper¹, Arash Salemi², Dallas T. Morisette³ (1. Sonrisa Research, Inc. and Purdue Univ.(United States of America), 2. Ohio State Univ.(United States of America), 3. Purdue Univ.(United States of America))

3:45 PM - 5:45 PM

[Mo-P-41] 1.2 kV, 10 A, 4H-SiC Bi-directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

*Ajit Kanale¹, Tzu-Hsuan Cheng¹, Kijeong Han¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹, Douglas Hopkins¹ (1. North Carolina State Univ.(United States of America))

3:45 PM - 5:45 PM

[Mo-P-42] Highly Efficient Switching Operation of 1.2 kV-class SiC SWITCH-MOS

*Masakazu Okada¹, Teruaki Kumazawa², Yusuke Kobayashi¹, Masakazu Baba¹, Shinsuke Harada¹ (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Toyota Motor Corp.(Japan))

3:45 PM - 5:45 PM

[Mo-P-43] Investigation on the Effect of Total Loss Reduction of HV Power Module by using SiC-MOSFET Embedding SBD

*Takaaki Tominaga¹, Shiro Hino¹, Yohei Mitsui¹, Junichi Nakashima¹, Koutarou Kawahara¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Advanced Technology R&D Center, Mitsubishi Electric Corp.(Japan))

3:45 PM - 5:45 PM

[Mo-P-44] On the Collector and Buffer Design of Ultrahigh Voltage n-type SiC IGBTs

*Thanh-Toan Pham^1,2, Andrei Mihaila¹, Marco Bellini¹, Enea Bianda¹, Giovanni Alfieri¹, Vinoth Sundaramoorthy¹, Lars Knoll¹, Renato Minamisawa² (1. ABB Switzerland Ltd, Corporate Research Centre(Switzerland), 2. University of Applied Sciences Northwestern (FHNW)(Switzerland))

3:45 PM - 5:45 PM

[Mo-P-45] Static characteristics of 5 kV SiC BJTs and Darlington’s

*Besar Asllani¹, Dominique Planson², Hervé Morel², Thomas Lagier¹ (1. SuperGrid Institute(France), 2. Laboratoire Ampère(France))

3:45 PM - 5:45 PM

[Mo-P-46] Diamond Schottky diodes improvement using edge termination structure

*Khaled DRICHE^1,3, Aurélien Maréchal², Hitoshi Umezawa^1,4, Nicolas Rouger⁵, Etienne Gheeraert^1,3 (1. Univ. Grenoble Alpes, CNRS, Grenoble INP, Inst. NEEL(France), 2. Univ. Grenoble Alpes, CNRS, Grenoble INP, G2ELab(France), 3. Univ. of Tsukuba(Japan), 4. AIST(Japan), 5. Univ. de Toulouse, CNRS, LAPLACE(France))

3:45 PM - 5:45 PM

[Mo-P-47] Stress Test of Cascode Switch Using SiC Static Induction Transistor

Koji Yano¹, *Takashi Matsumoto¹, Yasunori Tanaka² (1. Univ. of Yamanashi(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

3:45 PM - 5:45 PM

[Mo-P-48] High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

*Yidan Tang^1,2, Xinyu Liu¹, Yun Bai¹, Chengzhan Li³, Chengyue Yang ¹ (1. Microelectronics of Chinese Academy of Sciences Inst(China), 2. Chinese Academy of Sciences Univ(China), 3. Zhuzhou CRRC Times Electric Co., Ltd(China))

3:45 PM - 5:45 PM

[Mo-P-49] Impact of proton irradiation on power 4H-SiC MOSFETs

*Aleksandr A Lebedev¹, Vitalii Kozlovski², Leonid Fursin³, Anatoly M Strel’chuk¹, Pavel A Ivanov¹, Mikhail E Levinshtein¹, Aleksandr V A. Zubov⁴ (1. Ioffe Institute,Polytekhnicheskaya 26, St. Petersburg 194021, Russia(Russia), 2. St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, St. Petersburg 195251, Russia(Russia), 3. United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E Monmouth Junction, NJ 08852, USA(United States of America), 4. National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101, Russia(Russia))

3:45 PM - 5:45 PM

[Mo-P-50] Effect of 5MeV Proton Irradiation on 1200V 4H-SiC VDMOSFETs ON-State Characteristics

*Dongxun Li¹, Xiaoyan Tang¹, Yuming Zhang¹, Yanjing He¹, Qingwen Song¹ (1. School of Microelectronics, Xidian Univ.(China))

3:45 PM - 5:45 PM

[Mo-P-51] "The Study of Compariative Characterization between SiC MOSFET and Si-IGBT for Power Module and Three Phase SPWM Inverter"

*Heng LEE¹, Chun-Kai Liu¹, Tao-Chih Chang¹ (1. Electronics and Optoelectronics System Research Laboratories, Industrial Technology Research Institute(Taiwan))

3:45 PM - 5:45 PM

[Mo-P-52] Impacts of the device structures on propagation delays in 4H-SiC CMOS ring oscillators

*Mitsuo Okamoto¹, Shinsuke Harada¹, Hajime Okumura¹ (1. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

3:45 PM - 5:45 PM

[Mo-P-53] High Temperature Measurement Techniques with Ni/SiC Schottky Diodes, Based on Forward Voltage Difference

*Gheorghe Brezeanu¹, Gheorghe Pristavu¹, Florin Draghici¹, Marian Badila¹, Razvan Pascu², Ion Rusu¹, Oana Tutunaru² (1. Univ. Politehnica of Bucharest(Romania), 2. National Inst. for Research and Development in Microtechnologies(Romania))

3:45 PM - 5:45 PM

[Mo-P-54LN] The control of conduction type in high quality bulk solution growth of SiC

*Can Zhu¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1. Nagoya Univ.(Japan), 2. National Inst.of Advanced Indus. Sci. and Tech.(Japan))

3:45 PM - 5:45 PM

[Mo-P-55LN] Study on the Influence of Si implantation on the Surface of SiC DIMOS

*Jheng-Yi Jiang¹, Jia-Qing Hung¹, Pin-Wei Huang¹, Tian-Li Wu², Chih-Fang Huang¹ (1. National Tsing Hua University(Taiwan), 2. National Chiao Tung University(Taiwan))

Session information

[Mo-P] Poster Presentation

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