13:45 〜 15:45

[IP-01(Invited)] SiC epitaxial reactor cleaning by ClF₃ gas with the help of reaction heat

Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

13:45 〜 15:45

[IP-02(Invited)] Silicon vacancy related defects in 4H SiC for quantum technology

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

13:45 〜 15:45

[IP-03(Invited)] Evaluation of the influence of Al⁺ implantation on the forward degradation of SiC bipolar devices

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

13:45 〜 15:45

[IP-04(Invited)] Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

13:45 〜 15:45

[Th-P-01] Modified hot-zone design of growth cell for reducing the warpage of 6”-SiC wafer

*Byung-Kyu Jang¹, Jonghwi Park¹, Jung-Woo Choi¹, Eunsu Yang¹, Jung-Gyu Kim¹, Sang-Ki Ko¹, Myung-Ok Kyun¹, Kap-Ryeol Ku¹, Yeon-Suk Jang², WON JAE LEE^1,2 (1. SKC(Korea), 2. Dongeui Univ.(Korea))

13:45 〜 15:45

[Th-P-02] Effect of Al Addition on Surface Morphology in Solution Growth of SiC Using Cr Solvent without Molten Si

*Koki Suzuki¹, Toshinori Taishi¹ (1. Shinshu Univ.(Japan))

講演取消

13:45 〜 15:45

[Th-P-03] Withdrawn

13:45 〜 15:45

[Th-P-04] Investigation on the treading dislocations formed by lattice misfits during initial stage of sublimation growth of 4H-SiC

*Tai Hee Eun¹, Im-Gyu Yeo¹, Jang-Yul Kim¹, Seung-Seok Lee¹, Han-Suk Seo¹, Myong-Chuel Chun¹ (1. RIST (Research Institute of Industrial Science and Technology)(Korea))

講演取消

13:45 〜 15:45

[Th-P-05] Withdrawn

13:45 〜 15:45

[Th-P-06] Improvement of repeatability on N-type 4H-SiC epitaxial growth by high speed wafer rotation vertical CVD tool

*Yoshiaki Daigo¹, Akio Ishiguro¹, Shigeaki Ishii¹, Takehiko Kobayashi¹, Yoshikazu Moriyama¹ (1. NuFlare Technology, Inc.,(Japan))

13:45 〜 15:45

[Th-P-07] Resistive heater element made of highly durable TaC-coated graphite for high-temperature and highly corrosive processes: Application to MOCVD GaN epitaxial growth

*Daisuke Nakamura¹, Tetsuo Narita¹, Taishi Kimura¹ (1. Toyota central R&D labs., inc.(Japan))

13:45 〜 15:45

[Th-P-08] A New Permanganate-Free Slurry for GaN-SiC CMP Applications

*Treliant Fang¹, Ping-Chung Chen², Ming-Hsun Lee² (1. Flux Research Institute, LLC(United States of America), 2. Scientech Corp., Ltd.(Taiwan))

13:45 〜 15:45

[Th-P-09] Evolution and Future Direction of SiC Substrate Processing

*Rob Rhoades¹, Sarah Okada¹ (1. Revasum(United States of America))

講演取消

13:45 〜 15:45

[Th-P-10] Withdrawn

13:45 〜 15:45

[Th-P-11] Characterization of Prismatic Stacking Faults of Carrot Defects in 4H-SiC Epi Wafer

*Hideki Sako^1,3, Kenji Kobayashi², Kentaro Ohira³, Toshiyuki Isshiki³ (1. Toray Research Center, Inc.(Japan), 2. Hitachi High-Technologies Corp.(Japan), 3. Kyoto Institute of Technology(Japan))

13:45 〜 15:45

[Th-P-12] Defect Characterization in 100 mm commercial 4H-SiC Substrate and Homoepitaxial Wafer

*Long Yang^1,2, Lixia Zhao^1,2, Huiwang Wu^1,2, Yafei Liu³, Balaji Raghothamachar³, Michael Dudley³ (1. Hebei Key Lab. of New Semiconductor Materials(China), 2. Hebei Poshing Electronics Tech. Corp. Ltd.(China), 3. Stony Brook Univ.(United States of America))

講演取消

13:45 〜 15:45

[Th-P-13] Withdrawn

13:45 〜 15:45

[Th-P-14] Verification of Forward Degradation in PiN Diode Using Free-Standing 4H-SiC Epitaxial Layers

*Yusuke Miyata¹, Hiroaki Okabe¹, Tomoaki Furusho¹, Kazuya Konishi¹, Kenji Hamada¹, Hiroshi Watanabe¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric Corp.(Japan))

13:45 〜 15:45

[Th-P-15] Evaluation of suppressing forward voltage degradation by using a low BPD density substrate or an epitaxial wafer with an HNDE

*Yoshitaka Nishihara¹, Koji Kamei¹, Kenji Momose¹, Hiroshi Osawa¹ (1. SHOWA DENKO K.K.(Japan))

13:45 〜 15:45

[Th-P-16] Defect Detection in SiC Device Processes using a Mirror Electron Microscope Inspection System

*Keiko Masumoto¹, Junji Senzaki¹, Masaki Hasegawa², Kentaro Ohira², Kazutoshi Kojima¹, Kenji Kobayashi², Hajime Okumura¹ (1. National Inst. of Advanced Indus. Sci. and Tech.(Japan), 2. Hitachi High-Technologies Corp.(Japan))

13:45 〜 15:45

[Th-P-17] Evaluations of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation

*Takaya Sugiura¹, Naoki Takahashi¹, Nobuhiko Nakano¹ (1. Keio Univ.(Japan))

講演取消

13:45 〜 15:45

[Th-P-18] Withdrawn

13:45 〜 15:45

[Th-P-19] Comparative results of low-temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons

Vitali V. Kozlovski¹, Oleg Korolkov², Alexander A. Lebedev³, Jana Toompuu², *Natalja Sleptsuk² (1. Peter the Great St. Petersburg Polytechnic University(Russia), 2. Tallinn University of Technology(Estonia), 3. Ioffe Institute(Russia))

13:45 〜 15:45

[Th-P-20] Investigation of the influence of structural defects on the PL spectra in n-3C-SiC.

*Aleksandr A Lebedev¹, Lev V Shakhov¹, Natalia V Seredova ¹, Sergey P Lebedev¹, Irina P Nikitina¹ (1. Ioffe Institute(Russia))

13:45 〜 15:45

[Th-P-21] Wurtzite SiC Formation in Plastic Deformed 3C and 6H

*Joerg Pezoldt¹, Andrei A. Kalnin² (1. TU Ilmenau(Germany), 2. Saint Petersburg State Electrotechnical University(Russia))

13:45 〜 15:45

[Th-P-22] Current-Mode Deep Level Spectroscopy of Vanadium-doped HPSI 4H-SiC

*Giovanni Alfieri¹, Lukas Kranz¹, Andrei Mihaila¹ (1. ABB(Switzerland))

13:45 〜 15:45

[Th-P-23] Gate Leakage Current of SiO₂/4H-SiC Metal-Oxide-Semiconductor Using Poole-Frenkel Emission

Hojun Lee¹, Taeeun Kim¹, Jeong Hyun Moon², Ogyun Seok², Wook Bahng², *Min-Woo Ha¹ (1. Myongji Univ.(Korea), 2. Korea Electrotech. Res. Institute(Korea))

13:45 〜 15:45

[Th-P-24] Evaluation of Interface Traps Type, Energy Level and Density by C-V Measurements for Calibrated SiC MOSFET TCAD Simulations

Ilaria Matacena¹, *Luca Maresca¹, Michele Riccio¹, Andrea Irace¹, Giovanni Breglio¹, Santolo Daliento¹ (1. University of Naples "Federico II"(Italy))

13:45 〜 15:45

[Th-P-25] Photo-assisted Corona-charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-V

*Alexandre Savtchouk¹, Marshall Wilson¹, John D'Amico¹, Carlos Almeida¹, Andrew Hoff², Jacek Lagowski¹ (1. Semilab SDI(United States of America), 2. Electrical Engineering Department, University of South Florida(United States of America))

13:45 〜 15:45

[Th-P-26] Near zero field spin dependent charge pumping: effects of nitrogen in 4H-SiC MOSFETs

*Mark Anders¹, Patrick M Lenahan², Jason T Ryan¹ (1. National Institute of Standards and Technology(United States of America), 2. Pennsylvania State University(United States of America))

13:45 〜 15:45

[Th-P-27] Formation and crystallinity evaluation of periodic nanostructures on SiC induced by ultra-short laser pulse

*Reina Miyagawa¹, Shusuke Yoshikawa¹, Hwan Hong Lim², Takunori Taira^2,3, Osamu Eryu¹ (1. Nagoya Inst. of Tech.(Japan), 2. Inst. of Mol. Sci.(Japan), 3. RIKEN SPring-8(Japan))

13:45 〜 15:45

[Th-P-28] Improvement of surface morphology and state density of 4H-SiC using reduced-graphene oxide (r-GO) as a capping layer

*Seongjun Kim¹, Minwho Lim², Hong-Ki Kim¹, Min-Je Sung¹, Min-Jae Kang¹, Hahye Choi¹, Nam-Suk Lee¹, Tobias Erlbacher², Anton Bauer², Hoon-Kyu Shin¹ (1. Pohang Univ. of Sci. and Tech.(Korea), 2. Fraunhofer Inst. for Integrated Systems and Device Tech. (IISB)(Germany))

講演取消

13:45 〜 15:45

[Th-P-29] Withdrawn

13:45 〜 15:45

[Th-P-30] Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors

*Tatsuya Meguro¹, Fumiaki Hasebe¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1. Hiroshima Univ.(Japan), 2. National Institutes for Quantum and Radiological Science and Technology (QST)(Japan), 3. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))

13:45 〜 15:45

[Th-P-31] Effect of phosphorus doped poly annealing on threshold voltage stability and thermal oxide reliability in 4H-SiC MOSFET

*Kwangwon Lee¹, Youngho Seo¹, Taeseop Lee¹, Kyeongseok Park¹, Martin Domeij², Fredrik Allerstam², Thomas Neyer³ (1. ON semiconductor(Korea), 2. ON semiconductor (Sweden), 3. ON semiconductor (Germany))

13:45 〜 15:45

[Th-P-32] Rapid Growth of SiO₂ on SiC with Atomically Flat Interface and Low D_it using High Pressure Microwave Oxygen Plasma

*Shengkai Wang^1,2, Jilong Hao^1,2, Nannan You^1,2, Yun Bai^1,2, Xinyu Liu^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sciences(China), 2. Univ. of Chinese Academy of Sciences(China))

13:45 〜 15:45

[Th-P-33] Interface Engineering of SiC MOS Devices by High-temperature CO₂ Treatment

*Takuji Hosoi¹, Momoe Ohsako¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1. Osaka University(Japan))

13:45 〜 15:45

[Th-P-34] Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs

*Marco Bellini¹, Lars Knoll¹ (1. ABB Switzerland Ltd, Corporate Research Center(Switzerland))

13:45 〜 15:45

[Th-P-35] 1.2 kV SiC trench MOSFETs with double p-base junctions

*Ogyun Seok¹, In Ho Kang¹, Hyoung Woo Kim¹, Jeong Hyun Moon¹, Moonkyong Na¹, Sangcheol Kim¹, Nam Kyun Kim¹, Young Jo Kim¹, Hyun Jin Jung¹, Wook Bahng¹ (1. Korea Electrotechnology Research Institute(Korea))

13:45 〜 15:45

[Th-P-36] Analysis of the static characteristics of 4H-SiC Trench MOSFET with novel trench bottom structure

*Hyoung Woo Kim¹, Ogyun Seok¹, Jeong Hyun Moon¹, Wook Bahng¹ (1. Korea Electrotechnology Research Institute(Korea))

13:45 〜 15:45

[Th-P-37] Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

*Xiao Chuan Deng¹, Hao Zhu¹, Xuan Li¹, Xiao Jie Xu¹, Kun Zhou², Zhi Qiang Li², Bo Song³, You Run Zhang¹, Bo Zhang¹ (1. University of Electronic Science and Technology of China(China), 2. China Academy of Engineering Physics(China), 3. Nanjing Electronic Device Institute(China))

13:45 〜 15:45

[Th-P-38] Comparison of Electric Field Profile and Breakdown Voltage of 1.2 kV 4H-SiC Superjunction DMOSFETs and Conventional DMOSFETs

*Chen-Dong Tzou¹, Jhen-Min Hong¹, Yun-Kai Lai¹, Kung-Yen Lee¹, Chih-Fang Huang² (1. National Taiwan Univ.(Taiwan), 2. National Tsing Hua Univ.(Taiwan))

13:45 〜 15:45

[Th-P-39] Investigating the Limit of On-Resistance and Breakdown Voltage of Silicon Carbide Power Transistors

*Johanna Mueting¹, Ulrike Grossner¹ (1. ETH Zurich(Switzerland))

13:45 〜 15:45

[Th-P-40] Physical Simulations and Measurements of 10 kV 4H-SiC PiN Diodes

*K. Elgammal¹, Kai Tian², Lasse Vines³, Marianne E. Bathen³, Wlodek Kaplan⁵, Adolf Schöner⁵, Robin Karhu⁴, Jawad Ul-Hassan⁴, Jinghua Xia⁶, Anders Hallen¹ (1. Royal Institute of Technology, KTH(Sweden), 2. Xi'an Jiatong Univ.(China), 3. Univ. of Oslo(Norway), 4. Linkoping Univ.(Sweden), 5. Ascatron AB(Sweden), 6. GEIRI Co Ltd.(China))

13:45 〜 15:45

[Th-P-41] Short Circuit Ruggedness of 600 V SiC Trench JFETs

*Vinoth Kumar Sundaramoorthy¹, Lukas Kranz¹, Stephan Wirths¹, Marco Bellini¹, Gianpaolo Romano¹, Enea Bianda¹, Lars Knoll¹, Andrei Mihaila¹ (1. ABB Switzerland Ltd(Switzerland))

13:45 〜 15:45

[Th-P-42] Effects of Pulsed and DC Body Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics

*Ronald Green Green¹, Aivars J Lelis¹, Franklin L Nouketcha^1,2 (1. U.S. Army Research Laboratory(United States of America), 2. University of Maryland(United States of America))

13:45 〜 15:45

[Th-P-43] Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

*Akinori Takeyama¹, Keigo Shimizu², Takahiro Makino¹, Yuichi Yamazaki¹, Shin-ichiro Kuroki³, Yasunori Tanaka², Takeshi Ohshima¹ (1. QST(Japan), 2. AIST(Japan), 3. Hiroshima Univ.(Japan))

13:45 〜 15:45

[Th-P-44] 4H-SiC Pixel Device with UV Photodiode and MOSFETs for Radiation-Hardened UV Image Sensors

*Kenta Nishigaito¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-ichiro Kuroki¹ (1. Research Institute for Nanodevice and Bio Systems, Hiroshima Univ.(Japan), 2. National Institutes for Quantum and Radiological Science and Technology (Japan), 3. National Institute of Advanced Industrial Science and Technology (Japan))

13:45 〜 15:45

[Th-P-45] Systematic analysis and optimization of Silicon Carbide ultra-thin (<2um) x-ray sensors for synchrotrons beam position monitors applications

*Maria Carulla¹, Selam Nida², Alexander tsibizov², Thomas Ziemann², Mario Birri¹, Beat Meyer¹, Daniel Grolimund¹, Claude Pradervand¹, Oliver Bunk¹, Ulrike Grossner², Massimo Camarda Camarda¹ (1. Paul Scherrer Inst.(Switzerland), 2. ETH Zurich, Advance Power Semiconductor Lab.(Switzerland))

13:45 〜 15:45

[Th-P-46] Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs

*Katsuya Okamura¹, Fujio Naito^1,2, Ken Takayama¹, Hidenori Kitai³, Hisato Michikoshi³, Kunihiro Sakamoto³, Akira Tokuchi⁴, Tatsuya Kaito⁵, Daiki Kumamoto⁶ (1. KEK(Japan), 2. J-PARC(Japan), 3. AIST(Japan), 4. Pulsed Power Japan Lab.(Japan), 5. Chiba Inst. of Tech.(Japan), 6. Nagaoka Univ. of Tech(Japan))

13:45 〜 15:45

[Th-P-47] Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs

*Peter Alexandrov¹, Matt O'Grady¹ (1. United Silicon Carbide, Inc.(United States of America))

13:45 〜 15:45

[Th-P-48] High-Performance Temperature Sensors Based on Dual 4H-SiC JBS Devices

Ngoc Thi Nguyen¹, Seong Ji Min¹, *Sang Mo Koo¹ (1. Kwangwoon University(Korea))

13:45 〜 15:45

[Th-P-49LN] Development of 150-mm 4H-SiC Substrates using a High-temperature Chemical Vapor Deposition Method

*Takeshi Okamoto¹, Takahiro Kanda¹, Yuichiro Tokuda¹, Nobuyuki Ohya¹, Kiyoshi Betsuyaku², Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1. DENSO CORP.(Japan), 2. CRIEPI(Japan))

13:45 〜 15:45

[Th-P-50LN] Design, Synthesis and Characterization of Ultralightweight Three Dimensional SiC/SiC Composites

*Sakineh Chabi¹, Yanqiu Zhu² (1. The University of New Mexico(United States of America), 2. University of Exeter(UK))

13:45 〜 15:45

[Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution

*Takashi Hirayama¹, Keisuke Nagaya¹, Akira Miyasaka², Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³, Masashi Kato¹ (1. Nagoya Inst.(Japan), 2. Showa Denko(Japan), 3. AIST(Japan))

13:45 〜 15:45

[Th-P-52LN] Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs

*XINGYAN ZHOU¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Shinsuke Harada², Noriyuki Iwamuro¹, Hirosi Yano¹ (1. Tsukuba Univ.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

13:45 〜 15:45

[Th-P-53LN] Surface treatment of 4H-SiC MOSFETs prior to Al₂O₃deposition

*Muhammad Idzdihar Idris¹, A. B. Horsfall² (1. Univ. Teknikal Malaysia Melaka(Malaysia), 2. Newcastle Univ.(UK))

13:45 〜 15:45

[Th-P-54LN] A Subcircuit SPICE Model for SiC Charge-Balanced Schottky Diodes

*Collin W. Hitchcock¹, Xiang Zhou¹, Gyanesh Pandey¹, Reza Ghandi², Alexander Bolotnikov², T. Paul Chow¹ (1. Rensselaer Polytechnic Institute(United States of America), 2. GE Global Research(United States of America))

13:45 〜 15:45

[Th-P-55LN] Parameter Spread and its Effect on Lifetime in Discrete SiC MOSFETs

*Thomas Ziemann¹, Joni Jormanainen², Elena Mengotti³, Ulrike Grossner¹ (1. Advanced Power Semiconductor Laboratory, ETH Zurich(Switzerland), 2. ABB Oy(Finland), 3. ABB Schweiz AG(Switzerland))

セッション情報

[Th-P] Poster Presentation

認証