ICSCRM2019

講演情報

Oral Presentation

Characterization and Defect Engineering

[Mo-1B] Quantum Technology I

2019年9月30日(月) 11:30 〜 12:45 Annex Hall 2 (Kyoto International Conference Center)

12:00 〜 12:15

[Mo-1B-02] The carbon antisite-vacancy defect in 4H-SiC: energy level and charge state control

*Nguyen Tien Son1, Pontus Stenberg1, Valdas Jokubavicius1, Hiroshi Abe2, Takeshi Ohshima2, Jawad Ul-Hassan1, Ivan Gueorguiev Ivanov1 (1. Department of Physics, Chemistry and Biology, Linköping Univ., SE-58183 Linköping(Sweden), 2. National Inst. for Quantum and Radiological Sci. and Tech., 1233 Watanuki, Takasaki, Gunma 370-1292(Japan))