[Mo-P] Poster Presentation

[Mo-P-41] 1.2 kV, 10 A, 4H-SiC Bi-directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

*Ajit Kanale¹, Tzu-Hsuan Cheng¹, Kijeong Han¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹, Douglas Hopkins¹ (1. North Carolina State Univ.(United States of America))