ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[Th-1B] Extended Defects II

2019年10月3日(木) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

08:45 〜 09:15

[Th-1B-01(Invited)] Statistical analysis of killer and non-killer defects in SiC and impacts to device performance

*Hrishikesh Das1, S Sunkari1, J Justice1, H Pham2, G Park2 (1. ON Semiconductor, South Portland(United States of America), 2. ON Semiconductor, Bucheon(Korea))