ICSCRM2019

講演情報

印刷

Oral Presentation

Growth and Wafer Manufacturing

[Th-2B] Alternative Bulk Growth

2019年10月3日(木) 10:45 〜 12:15 Annex Hall 2 (Kyoto International Conference Center)

10:45 〜 11:15

[Th-2B-01(Invited)] Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

*Yuichiro Tokuda1, N. Hoshino2, H. Kuno1, H. Uehigashi1, T. Okamoto1, T. Kanda1, N. Ohya1, I. Kamata2, H. Tsuchida2 (1. DENSO CORPORATION(Japan), 2. Central Research Institute of Electric Power Industry (CRIEPI)(Japan))