2019年10月3日(木) 13:45 〜 15:45Annex Hall 1 (Kyoto International Conference Center)
スケジュール
4
13:45 〜 15:45
[Th-P-26] Near zero field spin dependent charge pumping: effects of nitrogen in 4H-SiC MOSFETs
*Mark Anders1, Patrick M Lenahan2, Jason T Ryan1(1. National Institute of Standards and Technology(United States of America), 2. Pennsylvania State University(United States of America))