High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs

講演情報

Oral Presentation

Packaging and Applications

2019年10月1日(火) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

10:00 〜 10:15

*Elena Mengotti¹, Enea Bianda¹, David Baumann¹, Jason Bettega¹, Joni Jormanainen² (1. ABB(Switzerland), 2. ABB Drives(Finland))