Control of the Photoluminescence of the Silicon Vacancy in 4H Silicon Carbide by Electric Fields

講演情報

Oral Presentation

Characterization and Defect Engineering

2019年10月1日(火) 13:45 〜 15:45 Annex Hall 2 (Kyoto International Conference Center)

14:15 〜 14:30

Lena Bergmann¹, *Maximilian Ruehl¹, Heiko B. Weber¹, Michael Krieger¹ (1. Friedrich-Alexander Univ. Erlangen-Nuremberg(Germany))