[Tu-P] Poster Presentation

[Tu-P-11] Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

*Matthias Widmann¹, Matthias Niethammer¹, Dmitry Yu. Fedyanin², Igor A. Khramtsov², Torsten Rendler¹, Ian D. Booker³, Jawad Ul Hassan³, Naoya Morioka¹, Roland Nagy¹, Yu-Chen Chen¹, Ivan G. Ivanov³, Nguyen Tien Son³, Takeshi Ohshima⁴, Michel Bockstedte^5,6, Adam Gali⁷, Cristian Bonato⁸, Sang-Yun Lee⁹, Jörg Wrachtrup¹ (1. 3rd Inst. of Physics, Univ. of Stuttgart(Germany), 2. Lab. of Nanooptics and Plasmonics, Moscow Inst. of Physics and Tech.(Russia), 3. Dep. of Physics, Chemistry and Biology, Linköping Univ.(Sweden), 4. National Inst. for Quantum and Radiological Sci. and Tech.(Japan), 5. Dep. Chemistry and Physics of Materials, Univ. of Salzburg(Austria), 6. Solid State Theory, Univ. of Erlangen-Nuremberg(Germany), 7. Hungarian Academy of Sci., Wigner Research Centre for Physics(Hungary), 8. Inst. of Photonics and Quantum Sci., SUPA, Heriot-Watt Univ.(UK), 9. Center for Quantum Information, Korea Inst. of Sci. and Tech.(Korea))