[Tu-P] Poster Presentation

[Tu-P-35] Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC

*Minwho Lim¹, Tomasz Sledziewski¹, Mathias Rommel¹, Tobias Erlbacher¹, Hongki Kim², Seongjun Kim², Hoon-Kyu Shin², Anton Bauer¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB(Germany), 2. Pohang Uni. of Science and Technology POSTECH(Korea))