[We-2A] Inversion Layer Transport

[We-2A-01(Invited)] Improvement of channel characteristics of SiC MOSFETs by sulfur doping based on newly-developed carrier transport model

*Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1. Advanced Technology R & D Center, Mitsubishi Electric Corporation(Japan), 2. Department of Materials Engineering, The University of Tokyo(Japan))