講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[We-2A] Inversion Layer Transport

2019年10月2日(水) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

11:15 〜 11:30

[We-2A-02] The Effects of Coulomb Scattering Centers at SiO₂/SiC interfaces on Electron Mobility in Inversion Layers

*Tetsuo Hatakeyama^1,2, Minoru Sometani², Hirohisa Hirai², Shinsuke Harada² (1. Toyama Pref. Univ.(Japan), 2. AIST(Japan))