ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[We-2A] Inversion Layer Transport

2019年10月2日(水) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

11:30 〜 11:45

[We-2A-03] Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers

*Hajime Tanaka1,2, Nobuya Mori1 (1. Osaka Univ.(Japan), 2. Kyoto Univ.(Japan))