ICSCRM2019

講演情報

印刷

Oral Presentation

Growth and Wafer Manufacturing

[We-2B] 4H-homo-epitaxy

2019年10月2日(水) 10:45 〜 12:15 Annex Hall 2 (Kyoto International Conference Center)

12:00 〜 12:15

[We-2B-05] Low temperature homoepitaxy of 4H-SiC with extremely high levels of electrically active dopants on off- and on-axis substrates

*Maksym Myronov1, Gerard Colston2, Stephan Wirths3 (1. The University of Warwick(UK), 2. Advanced Epi Materials and Devices Ltd(UK), 3. ABB Switzerland Ltd(Switzerland))