Schedule 3 4:15 PM - 6:15 PM [We-P-33] Room Temperature Processing of Low Resistance Contacts to p-type 4H-SiC using Laser Doping Kento Okamoto1, *Akihiro Ikeda2, Toshifumi Kikuchi1, Hiroshi Ikenoue1, Tanemasa Asano1 (1. Kyushu Univ.(Japan), 2. Sojo Univ.(Japan))
