[AMD7] Oxide TFT: Fabrication Process

[AMD7-1(Invited)] Nanostructured IGZO thin-film transistors with remarkably enhanced current density and on-off ratio

Kairong Huang¹, *Chuan Liu¹ (1. Sun Yat-sen University (China))

キーワード：Thin-film transistor, oxide semiconductor, nanostructures

We develop oxide TFTs with nanoscale and periodic degenerately doped heterostructures by using a strategy based on near-field nanolithography. These nanostructured TFTs remarkably enhanced in current density, compared with homogeneous IGZO TFTs. The on–off ratio was higher than 10⁹, with notably scaling effect with channel length.