The 26th International Display Workshops (IDW '19)

講演情報

Oral Presentation

[AMD7] Oxide TFT: Fabrication Process

2019年11月29日(金) 13:20 〜 14:40 Mid-sized Hall B (1F)

Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)

13:20 〜 13:45

[AMD7-1(Invited)] Nanostructured IGZO thin-film transistors with remarkably enhanced current density and on-off ratio

Kairong Huang1, *Chuan Liu1 (1. Sun Yat-sen University (China))

キーワード:Thin-film transistor, oxide semiconductor, nanostructures

We develop oxide TFTs with nanoscale and periodic degenerately doped heterostructures by using a strategy based on near-field nanolithography. These nanostructured TFTs remarkably enhanced in current density, compared with homogeneous IGZO TFTs. The on–off ratio was higher than 109, with notably scaling effect with channel length.