[AMD7] Oxide TFT: Fabrication Process

[AMD7-3] Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

*Jong Beom Ko¹, Seung-Hee Lee¹, Sang-Hee Ko Park¹ (1. Korea Advanced Institute of Science and Technology (Korea))

キーワード：High mobility, Stability, Top-gate structure, oxide TFTs

Top-gate self-aligned structured TFT is appropriate for the high-end display. However, it is hard to realize highly stable high mobility characteristics, because GI deposition affects active surface in top-gate structure. Here we realize highly stable high mobility oxide TFTs by using thermal-ALD and oxygen sourcing plasma treatment for GI process.