The 26th International Display Workshops (IDW '19)

講演情報

Oral Presentation

[AMD7] Oxide TFT: Fabrication Process

2019年11月29日(金) 13:20 〜 14:40 Mid-sized Hall B (1F)

Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)

14:05 〜 14:25

[AMD7-3] Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors

*Jong Beom Ko1, Seung-Hee Lee1, Sang-Hee Ko Park1 (1. Korea Advanced Institute of Science and Technology (Korea))

キーワード:High mobility, Stability, Top-gate structure, oxide TFTs

Top-gate self-aligned structured TFT is appropriate for the high-end display. However, it is hard to realize highly stable high mobility characteristics, because GI deposition affects active surface in top-gate structure. Here we realize highly stable high mobility oxide TFTs by using thermal-ALD and oxygen sourcing plasma treatment for GI process.