[AMDp1] Oxide TFTs

[AMDp1-14] Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs

*Chuanbao Luo¹, Qianyi Zhang¹, Ziran Li¹, Xuechao Ren¹, Xiaolong Meng¹, Dai Tian¹, Bisheng Mo¹, Xiaohu Wei¹, Xialiang Yuan¹, Shijian Qin¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

キーワード： Cu diffusion, Barrier layer, Electrical characteristics, TOF-SIMS

The research reveals the effect of Mo and MoTi film on the suppression of Cu diffusion for BCE structure of a-Si and a-IGZO devices during severe thermal process. Electrical characters depict that a-IGZO film is superior to a-Si for suppressing Cu diffusion, resulting from untraceable Cu signal in ToF-SIMS.