[AMDp1] Oxide TFTs

[AMDp1-21L] Improved Mobility and Stability of Indium-free Oxide Thin Film Transistor by Metal Capping Layer

*Ji-Min Park¹, Ho-Hyun Nahm², Hyun-Suk Kim¹ (1. Chungnam National University (Korea), 2. Korea Advanced Institute of Science and Technology (Korea))

キーワード：thin film transistors, amorphous oxide semiconductors, BaSnO3, high mobility, stability

In this work, to get better electrical properties, metal capping layer and lift-off lithography process of a new type of Indium-free amorphous thin films and associated thin-film transistors (TFTs) were investigated. As a result, optimized TFTs showed high mobility (>30cm²/Vs) and excellent stability than conventional InZnO TFTs.