[AMDp1] Oxide TFTs

[AMDp1-24L] High mobility p-type tin oxide thin-film by adopting passivation layer

*Song-Yi Ahn¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))

キーワード：p-type SnO, thin-film transistors, SiO2 passivation

The effects of SiO₂ passivation on tin monoxide (SnO) semiconductor was investigated. In X-ray photoelectron spectroscopy studies revealed that the tail-state above valence band maximum was clearly detected in SiO₂- capped SnO film which may improve the p-type conductivity. As a result, the resulting SnO thin-film transistors show enhanced electrical properties.