[AMDp1] Oxide TFTs

[AMDp1-8] Characteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield LayerCharacteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield Layer

*Qian Ma^1,2, Xingyu Zhou², YuanJun Hsu², Yuanchun Wu² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

Keywords:Top-gate Self-aligned, a-IGZO TFTs, Short channel TFT, stability

A top-gate self-aligned oxide amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) was examind for active matrix organic light-emitting diode (AMOLED) display. The device exhibited robust device performance, such as excellent threshold voltage uniformity, high mobility, and good gate bias stress stabilities. Furthermore, remarkable short channel characteristics were achieved.