[DES2] Driving Technology

[DES2-4] Novel Driving Methods of Gate Driver Circuit for Depletion Mode Oxide TFTs

*Jongsu Oh¹, Kyung-Mo Jung¹, Soo-Yeon Lee², KeeChan Park³, Jae-Hong Jeon⁴, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea), 2. Seoul National University (Korea), 3. Konkuk University (Korea), 4. Korea Aerospace University (Korea))

キーワード：Gate Driver Circuit, Thin-Film Transistor, Depletion Mode, Threshold Voltage, Reliability

We introduce novel driving methods of pull-down unit in a gate driver circuit for enhancement and depletion mode a-IGZO thin-film transistors (TFTs). Using 3T1C diode connection structure, our circuit can compensate for V_TH of pull-down unit in the enhancement mode and can be normally operated in the depletion mode.