The 26th International Display Workshops (IDW '19)

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Oral Presentation

[MEET6] Micro/NanoDisplays and Nanotechnology Application (2)

Special Topics of Interest on Micro/Mini LEDs

Fri. Nov 29, 2019 3:00 PM - 4:20 PM Conference Hall (1F)

Chair: Chih-Jen Shih (ETH Zurich, Switzerland)
Co-Chair: Jeonghun Kwak (Seoul National University)

4:00 PM - 4:20 PM

[MEET6-4L] In-situ EUV Irradiation for Etching Residual Removal of AM Mini-LED

YONG DENG1, JUNLING LIU1, *MINLI TAN1, MIN XIONG1, LIANGYI CAI1, WENBO LIU1, QUANSHENG LIU1, YIFENG YANG1, RUI ZHAO1, WEIMIN ZHANG1 (1. Shenzhen China Star Optoelectronic Technology Company, Ltd. (China))

Keywords:Mini-LED, EUV, Porous Structure, Etching Residual

Given the demand of high current drive, AM Mini-LED backplane usually uses dense plum-blossom-type design to optimize hole lapping. However, this porous design leads to a serious M2 etching residual issue. By using in-situ EUV irradiation, the infiltration of etchant to porous structure can be increased and the etching residual can be removed without affecting electrical characteristics of the device.