[MEET6] Micro/NanoDisplays and Nanotechnology Application (2)

[MEET6-4L] In-situ EUV Irradiation for Etching Residual Removal of AM Mini-LED

YONG DENG¹, JUNLING LIU¹, *MINLI TAN¹, MIN XIONG¹, LIANGYI CAI¹, WENBO LIU¹, QUANSHENG LIU¹, YIFENG YANG¹, RUI ZHAO¹, WEIMIN ZHANG¹ (1. Shenzhen China Star Optoelectronic Technology Company, Ltd. (China))

キーワード：Mini-LED, EUV, Porous Structure, Etching Residual

Given the demand of high current drive, AM Mini-LED backplane usually uses dense plum-blossom-type design to optimize hole lapping. However, this porous design leads to a serious M2 etching residual issue. By using in-situ EUV irradiation, the infiltration of etchant to porous structure can be increased and the etching residual can be removed without affecting electrical characteristics of the device.