[TuP] Poster

[TuP-25] Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate

*Ryosuke Yada¹, Kouji Agata¹, Liang Zhao¹, Shigo Ito¹, Sae Aoki¹, Kazuhiko Shimomura¹ (1. Sophia Univ. (Japan))

Presentation style: Online

キーワード：Silicon photonics, MOVPE, GaInAsP MQW LD