[Tue-G1] Thin Film

[Tue-G1-5] Award Applied
A possible Mott insulator with high electron mobility:
Rock-salt structured NbO epitaxial thin film

*Rintaro Kimura¹, Kenichi Kaminaga², Shingo Maruyama³, Yuji Matsumoto⁴ (1. Univ. of Tohoku (Japan), 2. Univ. of Tohoku (Japan), 3. Univ. of Tohoku (Japan), 4. Univ. of Tohoku (Japan))

キーワード：thin film, oxide electronics, Mott insulator, transition metal oxide, PLD