[G] 溶融・凝固プロセス 高温プロセス(1)

[341] Solid solubility and state of Ti in 3C-SiC

*Hui CHEN¹, Kazuki MORITA¹ (1. University of Tokyo)

キーワード：Solid solubility、Silicon carbide、Titanium、Site preference

The solid solubility limits of Ti in 3C-SiC are 37.2 and 36.4 ppmw at 1723 and 1623 K, respectively. SXES gives an experimental evidence for that the defect for Ti in 3C-SiC is Si-site substitution.