[G] 半導体・テラヘルツ光

[303] The electrical resistance change behaviors in MnTe₂ film

*LI SHIH　YUAN¹、Shuang Yi³、安藤 大輔²、須藤 祐司^2,3 (1. 東北大工(院生）、2. 東北大工(教授)、3. 東北大(AIMR))

キーワード：Semiconductor、Thin film、Electrical properties、Phase change、RF sputtering

The cross-point and hole-type devices of MnTe₂ had been fabricated and evaluated. The electrical resistance of MnTe₂ had changed by the application of the electrical filed.