[G] Solid process/ Solid and welding process(2)

[129] Effect of Temperature on Fatigue Crack Propagation Rate at the Interface between Si Die and Underfill in Real Semiconductor Package Structures

*Takumi SHINADA¹, Yoshiharu KARIYA², Hiroshi YAMAGUCHI³, Toshiaki ENOMOTO³, Takuya YOSHIDA³ (1. Graduate School of Shibaura Institute of Technology, 2. Department of Materials Science and Engineering, Shibaura Institute of Technology, 3. NAMICS Corporation)

Keywords:Fatigue crack propagation、Interfacial crack、Semiconductor Package、Underfill resin、Four-point bending

高温で4点曲げ疲労試験を実施する方法を開発し，Siダイ / UF界面の疲労き裂進展速度におよぼす温度影響を検討した．